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F59L4G81XB

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

F59L4G81XB datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

F59L4G81XB datasheet preview

F59L4G81XB Datasheet Details

Part number F59L4G81XB
Datasheet F59L4G81XB-ESMT.pdf
File Size 2.42 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 3.3V NAND Flash Memory
F59L4G81XB page 2 F59L4G81XB page 3

F59L4G81XB Overview

NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer mands, address, and data. There are five control signals used to implement the asynchronous data interface:.

F59L4G81XB Key Features

  • Operating voltage range ­ VCC: 2.7-3.6V
  • Open NAND Flash Interface (ONFI) 1.0-pliant1
  • Single-level cell (SLC) technology
  • Organization
  • Asynchronous I/O performance ­ tRC/tWC: 25ns
  • Array performance ­ Read page: 115μs (MAX) with on-die ECC enabled ­ Read page: 25μs (MAX) with on-die ECC disabled ­ Pr
  • mand set: ONFI NAND Flash protocol
  • Advanced mand set ­ Program page cache mode ­ Read page cache mode ­ Permanent block locking (blocks 47:0) ­ One-time pr
  • Operation status byte provides software method for detecting ­ Operation pletion ­ Pass/Fail condition ­ Write-protect s
  • Ready/Busy# (R/B#) signal provides a hardware method of detecting operation pletion

F59L4G81A from other manufacturers

View F59L4G81A datasheet index

Brand Logo Part Number Description Other Manufacturers
Elite Semiconductor Logo F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory Elite Semiconductor
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

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