Part F59L4G81XB
Description 3.3V NAND Flash Memory
Manufacturer Elite Semiconductor Microelectronics Technology
Size 2.42 MB
Elite Semiconductor Microelectronics Technology

F59L4G81XB Overview

Description

NAND Flash devices include an asynchronous da.

Key Features

  • Operating voltage range ­ VCC: 2.7–3.6V
  • Open NAND Flash Interface (ONFI) 1.0-compliant1
  • Single-level cell (SLC) technology
  • Organization ­ Page size: 4352 bytes (4096 + 256 bytes) ­ Block size: 64 pages ­ Number of planes: 1
  • Asynchronous I/O performance ­ tRC/tWC: 25ns
  • Command set: ONFI NAND Flash protocol
  • Operation status byte provides software method for detecting ­ Operation completion ­ Pass/Fail condition ­ Write-protect status
  • Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
  • WP# signal: Write protect entire device
  • ECC: 8-bit internal ECC is disabled at default2. It can be toggled using the SET FEATURE command