Datasheet4U Logo Datasheet4U.com

F59L4G81XB Datasheet 3.3v Nand Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT F59L4G81XB (2X) Flash 4 Gbit (512M x 8) 3.3V NAND Flash.

General Description

NAND Flash devices include an asynchronous data interface for high-performance I/O operations.

These devices

Key Features

  • Operating voltage range ­ VCC: 2.7.
  • 3.6V.
  • Open NAND Flash Interface (ONFI) 1.0-compliant1.
  • Single-level cell (SLC) technology.
  • Organization ­ Page size: 4352 bytes (4096 + 256 bytes) ­ Block size: 64 pages ­ Number of planes: 1.
  • Asynchronous I/O performance ­ tRC/tWC: 25ns.
  • Array performance ­ Read page: 115μs (MAX) with on-die ECC enabled ­ Read page: 25μs (MAX) with on-die ECC disabled ­ Program page: 200μs (TYP) with on-die ECC disabled ­ Program page: 24.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Elite Semiconductor Logo F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory Elite Semiconductor

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59L4G81CA-25BG2L 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59L4G81CA-25TG2L 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59L4G81KA 4-Gbit 3.3V NAND Flash Memory
F59L1G81LA 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB-25BCG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB-25BG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB-25TG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCIG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L4G81XB Distributor