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F59L4G81XB - 3.3V NAND Flash Memory

General Description

NAND Flash devices include an asynchronous data interface for high-performance I/O operations.

These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data.

Key Features

  • Operating voltage range ­ VCC: 2.7.
  • 3.6V.
  • Open NAND Flash Interface (ONFI) 1.0-compliant1.
  • Single-level cell (SLC) technology.
  • Organization ­ Page size: 4352 bytes (4096 + 256 bytes) ­ Block size: 64 pages ­ Number of planes: 1.
  • Asynchronous I/O performance ­ tRC/tWC: 25ns.
  • Array performance ­ Read page: 115μs (MAX) with on-die ECC enabled ­ Read page: 25μs (MAX) with on-die ECC disabled ­ Program page: 200μs (TYP) with on-die ECC disabled ­ Program page: 24.

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📁 Similar Datasheet

Part Number Description Manufacturer
F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory Elite Semiconductor
F59L1G81A 1 Gbit (128M x 8) 3.3V NAND Flash Memory Elite Semiconductor
F59L2G81A 2 Gbit (256M x 8) 3.3V NAND Flash Memory Elite Semiconductor
F59L512M81A 512Mbit (64M x 8) 3.3V NAND Flash Memory Elite Semiconductor
F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Elite Semiconductor

Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59L4G81CA-25BG2L 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59L4G81CA-25TG2L 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59L4G81KA 4-Gbit 3.3V NAND Flash Memory
F59L1G81LA 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT F59L4G81XB (2X) Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES  Operating voltage range ­ VCC: 2.7–3.6V  Open NAND Flash Interface (ONFI) 1.