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2N5359 - Silicon N-channel junction field-effect transistors

Download the 2N5359 datasheet PDF (2N5358 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon n-channel junction field-effect transistors.

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Note: The manufacturer provides a single datasheet file (2N5358-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5359
Manufacturer Unknown Manufacturer
File Size 377.32 KB
Description Silicon N-channel junction field-effect transistors
Datasheet download datasheet 2N5359 Datasheet

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Full PDF Text Transcription

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2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpose amplifier applications. CASE 20 (TO-72) 102 3 4 STYLE 3 PIN 1. 2. 3. 4. DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Device Dissipation @TA =25° C Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol IG(f) VGS(r) VDG PD Tstg TJ Value Unit 10 mAdc 40 Vdc 40 Vdc 300 2.
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