Datasheet Summary
2N5716 (SILICON) 2N5717 2N5718
SILICON LOW NOISE N- CHANNEL JUNCTION FIELD- EFFECT TRANSISTORS
Depletion Mode Junction Field- Effect Transistors designed for audio amplifiers in low- power or battery operated applications.
- Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/lAdc to 250 /lAde
- 2N5716 200 /lAde to 1.0 mAde
- 2N5717 800 /lAde to 4.0 mAde
- 2N 5718
I- High Forward Transadmittance @ VDS = 15 Vdc, f = 1.0 kHz Vls= 350 /lmhos (Typ) @ ID = 50 /lAde
- 2N5716 550/lmhos (Typ) @ ID = 200/lAdc
- 2N5717 900/lmhos (Typ) @ ID = 800 /lAde
- 2N5718
- Low Noise Voltage
- en = 75 nVIj""HZ (Max) @ f = 1.0 kHz
- Drain and Source Interchangeable
LOW NOISE N- CHANNEL JUNCTION FIELD-...