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2N5717 - SILICON LOW NOISE N-CHANNEL JUNCTION FET

Download the 2N5717 datasheet PDF. This datasheet also covers the 2N5716 variant, as both devices belong to the same silicon low noise n-channel junction fet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5716-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5717
Manufacturer Unknown Manufacturer
File Size 220.87 KB
Description SILICON LOW NOISE N-CHANNEL JUNCTION FET
Datasheet download datasheet 2N5717 Datasheet

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Other Datasheets by Unknown Manufacturer

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode Junction Field·Effect Transistors designed for audio amplifiers in low·power or battery operated applications. • Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/lAdc to 250 /lAde - 2N5716 200 /lAde to 1.0 mAde - 2N5717 800 /lAde to 4.0 mAde - 2N 5718 I• High Forward Transadmittance @ VDS = 15 Vdc, f = 1.0 kHz Vls= 350 /lmhos (Typ) @ ID = 50 /lAde - 2N5716 550/lmhos (Typ) @ ID = 200/lAdc - 2N5717 900/lmhos (Typ) @ ID = 800 /lAde - 2N5718 • Low Noise Voltage - en = 75 nVIj""HZ (Max) @ f = 1.0 kHz • Drain and Source Interchangeable LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS en = 75 nV/.
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