2N5864 - PNP SILICON ANNULAR TRANSISTOR

Datasheet Details

Part number	2N5864
Manufacturer	Unknown Manufacturer
File Size	118.25 KB
Description	PNP SILICON ANNULAR TRANSISTOR
Datasheet	2N5864 Datasheet
Additional preview pages of the 2N5864 datasheet.

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2N5864 (SILICON) PNP SILICON ANNULAR TRANSISTOR · .. designed for use in general-purpose amplifier and medium-speed switching applications. • High·Coliector·Emitter Breakdown Voltage- BVCEO = 70 Vdc (Mini @ IC = 10 mAdc • DC Current Gain Specified - 10 mA to 500 mA • High.Coliector Current - IC = 1.5 Adc Continuous PNPSILICON GENERAL-PURPOSE TRANSISTOR 'MAXIMUM RATINGS Rating Collector~Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC Po Po TJ. Tstg Value 70 90 5.0 1.5 1.25 7.15 8.

Published: Jul 13, 2018 |