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2N5985 Datasheet Preview

2N5985 Datasheet

HIGH POWER NPN SILICON TRANSISTORS

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2N5983 2N5984 2N5985(SILICON)
MJE5983 MJE5984 MJE5985
HIGH POWER NPN SILICON TRANSISTORS
de~igned for use in general purpose amplifier and switching
applications.
• DC Current Gain Specified to 8 Amperes
hFE = 20·120@ IC = 4.0 Adc
= 7.0 (Min) @ IC = 8.0 Adc
• Collector· Emitter Sustaining Voltage -
VCEO(sus) = 40 Vdc (Min) - 2N5983. MJE5983
= 60 Vdc (Min) - 2N5984. MJE5984
= 80 Vdc (Min) - 2N5985. MJE5985
• High Current Gain - 8andwidth Product -
fT = 2.0 MHz (Min) @ IC = 500 mAdc
• Complements to PNP Transistors -
2N5980. 2N5981. 2N5982 and MJE5980. MJE5981. MJE5982
• Choice of Packages - 2N5983 Series - Case 90
MJE5983 Series - Case 199
*MAXIMUM RATINGS
Rating
Svmbol
Collector~Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Peak
VeEO
VeB
VEB
Ie
Base Current
Total Device Dissipation
@Te= 250e
Derate above 2SoC
Ie
Po
Operating and Storage Junctior TJ.Tst9
Temperature Range
2N5983
MJE5983
40
60
-
2N5984
MUE5984
60
80
5.0
8.0
15
3.0
2N5985
MJE5985
80
100
.
90
-0.72
-65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
w/oe
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
* Indicates JE DEC Registered Data for 2N5983 Series.
FIGURE 1 - POWER DERATING
100
S80
!.
15
~
60
iii
is 40
'~"
J? 20
o
o
""" ""'-
""" """ "- '"
""" I'..
20 40 60 80 100 120 140 160
TC. CASE TEMPERATURE I'C)
8 AMPERE
POWER TRANSISTORS
NPN SILICON
40-60-80 VOLTS
90 WATTS
2N5983
2N5984
2N5985
STYLE 2
PlNI,EMlnER
2 COLLECTOR
3 BASE
NOTE
1 LEADSWITMIN 005"RAD OF TRUE
POSITlONITPlATMMC
CASE9O-OS
MJE5!l83
MJE!l984
MJE5985
STYLE 1
PIN! BASE
2. COLLECTOR
3 EMITTER
lB.0816.33
12.5712.83
318 43
051 0.16
3.61 3.86
2648SC
81 2.92
043 0.69
147314.99
18 24
yp
1.47 113
478 503
191 21
81 088
6. 724
2 48
1 D1M"G"ISTD CENTERLINE OF lEADS
CASE 199.(14
2-386




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2N5985 Datasheet Preview

2N5985 Datasheet

HIGH POWER NPN SILICON TRANSISTORS

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2N5983, 2N5984, 2N5985/MJE5983, MJE5984, MJE5985 (continued)
*ELECTRICAL CHARACTERISTICS (TC = 250 C unl... otherwise nohldl
I Cha_ristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (11
(lC = 200 mAde,lB =01
2N59B3, MJE59B3
2N5984, MJE5984
2N59B5, MJE5985
VCEO(susl
Collector Cutoff Currant
(VCE = 20 Vde, IB = 01
(VCE = 30 Vdc,IB = 01
(VCE = 40 Vde,IB = 01
2N59B3, MJE5983
2N5984, MJE5984
2N5985, MJE5985
ICEO
Collector Cutoff Currant
(VCE = 60 Vde, VEB(offl = 1.5 Vdel
(VCE = 80 Vde, VES(offl = 1.5 Vdel
(VCE = 100 Vde, VEB(offl = 1.5 Vdel
(VCE = 40 Vdc, VEB(offl = 1.5 Vdc,
TC = 1250 CI
(VCE = 60 Vde, VEB(offl = 1.5 Vde,
TC = 1250 CI
(VCE = 80 Vde, VEB(offl = 1.5 Vde,
TC = 125OC)
2N5983, MJE5983
2N5984,MJE5984
2N5985, MJE 5985
2N5983, MJE5983
2N5984,MJE5984
2N5985, MJE5985
ICEX
Emitter Cutoff Current
(VSE = 5.0 Vde, IC = 01
IESO
ON CHARACTERISTICS
DC Current Gain
(lc = 1.0Ade, VCE = 2.0Vdel
(lC = 4.0 Ade, VCE = 2.0 Vdel
(lC = 8.0 Adc, VCE = 2.0 Vdel
Collector~Emitter Saturation Voltage
(lC = 4.0 Ade, IS = 400 mAdel
(lc = 8.0 Ade, IS = 1.2 Adel
hFE
VCE(satl
Base-Emitter Saturation Voltage
(lC = 8.0 Ade, IS = 1.2 Adel
VSE(satl
Base-Emitter On Voltage
(lc = 4.0 Ade, VCE = 2.0 Vdel
VSE(onl
Min
40
60
80
-
-
-
-
-
-
-
-
-
-
40
20
7.0
-
-
-
-
Max
-
-
1.0
1.0
1.0
100
100
100
1.0
1.0
1.0
1.0
-
120
-
0.6
1.7
2.5
1.4
Unit
Vdc
mAde
/lAde
mAde
mAde
-
Vde
Vde
Vde
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (21
(lC = 500 mAde, VCE = 10 Vde, I test = 1.0 MHzl
Output Capacitance
(VCS = 10 Vde, IE = 0, I = 0.1 MHz)
Small-5ignal Current Gain
(lC= 1.0 Ade, VCE =4.0Vde,l= 1.0 kHz)
fr
2.0
Cob
-
hie
20
MHz
-
pF
250
-
*'ndlcates JE DEC Registered Data for 2N5983 Series.
(1) Pulse Test: Pulse WidthS300 jJs, Duty CycleS2.0%.
I(2) fT = hfel- f test
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
VCC
+30 V
Ra
51
SCOPE
1000
500
200
!
~ 100
;::
~.
50
FIGURE 3 - TURN-ON TIME
r-
r--- .............
VCC - 30 V
Ic/la -10
'r
'd@V of ~5.0V
Ir. 11:=:10 ns
DUTY CYCLE = 1.0%
-4 V
RB ••d RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
01 MUST BE FAST RECOVERY TYPE, eg
MBD5300 USED ABOVE IB =100 rnA
MSD6100 USED BELOW IB =100 rnA
20
10
0.1
TJ =250C
0.2 0.3 0.5 1.0 2.0 3.0
IC. COLLECTOR CURRENT (AMP)
5.0
10
2-387



Part Number 2N5985
Description HIGH POWER NPN SILICON TRANSISTORS
Maker ETC
Total Page 4 Pages
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2N5985 Datasheet PDF





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