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ETC

2SC640 Datasheet Preview

2SC640 Datasheet

NPN Silicon Epitaxial Planar Transistor

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2SC640 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups R, O,
Y, P and L, according to its DC current gain. As
complementary type the PNP transistor 2SA733
is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
Value
40
30
5
100
150
150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
Page 1 of 2
7/15/2011
Free Datasheet http://www.nDatasheet.com




ETC

2SC640 Datasheet Preview

2SC640 Datasheet

NPN Silicon Epitaxial Planar Transistor

No Preview Available !

Characteristics at Tamb=25 OC
Parameter
DC Current Gain
at V =6V, I =1mA 1)
CE C
Current Gain Group R
O
Y
P
Collector Base Breakdown Voltage
L
at IC=100μA
Collector Emitter Breakdown Voltage
at IC=10mA
Emitter Base Breakdown Voltage
at IE=10μA
Collector Cutoff Current
at VCB=40V
Emitter Cutoff Current
at VEB=3V
Collector Saturation Voltage
at IC=100mA, IB=10mA
Gain Bandwidth Product
at VCE=6V, IC=10mA
Output Capacitance
at VCB=6V, f=1MHz
Noise Figure
at VCE=6V, IE=0.5mA
at f=1KHz, RS=500
Symbol
hFE
hFE
hFE
hFE
hFE
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
fT
COB
NF
Min.
40
70
120
200
350
40
30
5
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
0.15
300
2.5
4
Max.
80
140
240
400
700
-
-
-
0.1
0.1
0.3
-
-
-
Unit
-
-
-
-
-
V
V
V
μA
μA
V
MHz
pF
dB
Page 2 of 2
7/15/2011
Free Datasheet http://www.nDatasheet.com


Part Number 2SC640
Description NPN Silicon Epitaxial Planar Transistor
Maker ETC
Total Page 2 Pages
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