900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






ETC

BUZ900X4S Datasheet Preview

BUZ900X4S Datasheet

N-Channel Power MOSFET

No Preview Available !

MAGNA
TEC
MECHANICAL DATA
Dimensions in mm (inches)
BUZ900X4S
BUZ901X4S
NEW PRODUCT UNDER DEVELOPMENT
N–CHANNEL
POWER MOSFET
3 1 .5 (1 .2 4 0 )
3 1 .7 (1 .2 4 8 )
7 .8 (0 .3 0 7 )
8 .2 (0 .3 2 2 )
12
W = 4 .1 (0 .1 6 1 )
4 .3 (0 .1 6 9 )
H=
4 .8
4 .9
(0 .1 8 7 )
(0 .1 9 3 )
(4 places)
1 1 .8 (0 .4 6 3 )
1 2 .2 (0 .4 8 0 )
8 .9 (0 .3 5 0 )
9 .6 (0 .3 7 8 )
Hex Nut M 4
(4 places)
R
4 .0 (0 .1 5 7 )
4 .2 (0 .1 6 5 )
0 .7 5 (0 .0 3 0 )
0 .8 5 (0 .0 3 3 )
43
3.3 (0.129)
3.6 (0.143)
14.9 (0.587)
15.1 (0.594)
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
38.0 (1.496)
38.2 (1.504)
R
=
4.0 (0.157)
(2 Places)
5 .1 (0 .2 0 1 )
5 .9 (0 .2 3 2 )
1 .9 5 (0 .0 7 7 )
2 .1 4 (0 .0 8 4 )
SOT227
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
Pin 4 – Drain
POWER MOSFETS FOR
AUDIO APPLICATIONS
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
VDSX
Drain – Source Voltage
VGS Gate – Source Voltage
ID Continuous Drain Current
ID(PK)
Body Drain Diode
PD
Total Power Dissipation
@ Tcase = 25°C
Tstg Storage Temperature Range
Tj Maximum Operating Junction Temperature
RθJC
Thermal Resistance Junction – Case
BUZ900X4S BUZ901X4S
160V
200V
±14V
32A
32A
500W
–55 to 150°C
150°C
0.3°C/W
Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
Prelim. 4/94




ETC

BUZ900X4S Datasheet Preview

BUZ900X4S Datasheet

N-Channel Power MOSFET

No Preview Available !

MAGNA
TEC
BUZ900X4S
BUZ901X4S
NEW PRODUCT UNDER DEVELOPMENT
ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
BVDSX Drain – Source Breakdown Voltage
VGS = –10V
ID = 10mA
BUZ900X4S
BUZ901X4S
BVGSS Gate – Source Breakdown Voltage
VDS = 0
IG = ±100µA
VGS(OFF) Gate – Source Cut–Off Voltage
VDS = 10V
ID = 100mA
VDS(SAT)* Drain – Source Saturation Voltage
VGD = 0
ID = 32A
VGS = –10V
IDSX Drain – Source Cut–Off Current
VDS = 160V
BUZ900X4S
VDS = 200V
BUZ901X4S
yfs* Forward Transfer Admittance
VDS = 10V
ID = 5A
Ciss Input Capacitance
Coss
Output Capacitance
VDS = 10V
f = 1MHz
Crss Reverse Transfer Capacitance
ton Turn–on Time
toff Turn-off Time
VDS = 20V
ID = 7A
Min.
160
200
±14
0.1
2
* Pulse Test: Pulse Width = 300µS , Duty Cycle 2%
Typ.
TBE
TBE
TBE
TBE
TBE
Max. Unit
V
V
1.5 V
12 V
10 mA
10 mA
6S
pF
nS
D
SG
Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
Prelim. 4/94


Part Number BUZ900X4S
Description N-Channel Power MOSFET
Maker ETC
PDF Download

BUZ900X4S Datasheet PDF






Similar Datasheet

1 BUZ900X4S N-Channel Power MOSFET
ETC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy