FM1608 Datasheet | Unknown Manufacturer

Features 64K bit Ferroelectric Nonvolatile RAM - Organized as 8,192 x 8 bits - High endurance 10 Billion (1010) read/writes - 10 year data retention at 85° C - No Delay™ write - Advanced high-reliability ferroelectric process Superior to BBSRAM Modules - No battery concerns - Monolithic reliability - True surface mount solution, no rework steps - Superior for moisture, shock, and vibration - Resistant to negative voltage undershoots SRAM & EEPROM patible - JEDEC 8Kx8 SRAM & EEPROM pinout - 120 ns access time - 180 ns cycle time - Equal access & cycle time for reads and writes Low Power Operation - 15 m A active current - 20 µA standby current Industry Standard Configuration - Industrial temperature -40° C to +85° C - 28-pin SOP or DIP Description The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design plexities of battery-backed SRAM. Its fast write and high write endurance make it superior to other types of nonvolatile memory. In-system operation of the FM1608 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1608 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions. These capabilities make the FM1608 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM1608 offers guaranteed operation over an industrial...