FM1608 Key Features
- Organized as 8,192 x 8 bits
- High endurance 10 Billion (1010) read/writes
- 10 year data retention at 85° C
- NoDelay™ write
- Advanced high-reliability ferroelectric process Superior to BBSRAM Modules
- No battery concerns
- Monolithic reliability
- True surface mount solution, no rework steps
- Superior for moisture, shock, and vibration
- Resistant to negative voltage undershoots SRAM & EEPROM patible
