.
Ramtron
24C64 - 64Kb FRAM Serial Memory
FM24C64 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion (1010) read/w.
STMicroelectronics
M27C512 - 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
M27C512 512 Kbit (64K x8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consump.
ETC
FM24CL64 - 64Kb 2.7V-3.6V FRAM Serial Memory
Preliminary FM24CL64 64Kb 2.7V-3.6V FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • Unlimited read/.
STMicroelectronics
M27C1024 - 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur.
AMI SEMICONDUCTOR
N64S0818HDA - (N64S0818HDA / N64S0830HDA) 64Kb Low Power Serial SRAMs
AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N64S0818HDA/N6.
NXP
89C51RB2 - 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM
INTEGRATED CIRCUITS 89C51RB2/89C51RC2/89C51RD2 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM Prelimina.
NXP
89C51RC2 - 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM
INTEGRATED CIRCUITS 89C51RB2/89C51RC2/89C51RD2 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM Prelimina.
NXP
89C51RD2 - 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM
INTEGRATED CIRCUITS 89C51RB2/89C51RC2/89C51RD2 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM Prelimina.
STMicroelectronics
M28F512 - 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory
M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLE.
STMicroelectronics
M27V102 - 1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM
M27V102 1 Mbit (64Kb x 16) Low Voltage UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION: – A.
STMicroelectronics
M27W102 - 1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM
M27W102 1 Mbit (64Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 70ns at VCC = 3.0V to 3.
STMicroelectronics
M27W512 - 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
M27W512 512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3..
BELLING
BL24S64 - 64Kbits EEPROM
BL24S64 64Kbits (8,192×8) Features Compatible with all I2C bidirectional data transfer protocol Memory array: – 64 Kbits (8 Kbytes) of EEPROM – Pa.
ST Microelectronics
M29F100B - 1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory
M29F100T M29F100B 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS .
ST Microelectronics
M29F100T - 1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory
M29F100T M29F100B 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS .
ST Microelectronics
M29F512B - 512 Kbit 64Kb x8 / Bulk Single Supply Flash Memory
M29F512B 512 Kbit (64Kb x8, Bulk) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS A.
ST Microelectronics
M29W102BB - 1 Mbit 64Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
M29W102BT M29W102BB 1 Mbit (64Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and R.
ST Microelectronics
M29W512B - 512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory
M29W512B 512 Kbit (64Kb x8, Bulk) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS A.
Dallas Semiconductor
DS1996 - 64kbit Memory iButtonTM
DS1996 64kbit Memory iButtonTM www.dalsemi.com SPECIAL FEATURES 65536 bits of read/write nonvolatile memory Overdrive mode boosts communication speed.