M29F100B - 1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory
The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply.
For Program and Erase operations the necessary high voltages are generated internally.
The device can also
M29F100T M29F100B 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word Status Register bits and Ready/Busy Output MEMORY BLOCKS Boot Block (Top or Bottom location) Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP E
M29F100B Features
* pended,in orderto read data from another block or to program data in another block, and then resumed. When power is first applied or if
