M29F102BB
FEATURES
SUMMARY
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SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 35ns PROGRAMMING TIME
- 8µs per Word typical 5 MEMORY BLOCKS
- 1 Boot Block (Bottom Location)
- 2 Parameter and 2 Main Blocks PROGRAM/ERASE CONTROLLER
- Embedded Word Program algorithm
- Embedded Multi-Block/Chip Erase algorithm
- Status Register Polling and Toggle Bits ERASE SUSPEND and RESUME MODES
- Read and Program another Block during Erase Suspend UNLOCK BYPASS PROGRAM MAND
- Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION
- Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK M28F102 PATIBLE
- Pin-out and Read Mode 20 YEARS DATA RETENTION
- Defectivity below 1 ppm/year ELECTRONIC SIGNATURE
- Manufacturer Code: 0020h
- Bottom Device Code M29F102BB: 0097h PACKAGES
- pliant with Lead-Free Soldering Processes
- Lead-Free Versions
Figure 1. Package
PLCC44 (K)
TSOP40 (N) 10 x...
