M29F100B
DESCRIPTION
The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.
July 1998
TSOP48 (N) 12 x 20 mm
SO44 (M)
Figure 1. Logic Diagram
16 A0-A15 W E G RP M29F100T M29F100B
15 DQ0-DQ14 DQ15A- 1 BYTE RB
AI01974
1/30
M29F100T, M29F100B
Figure 2A. TSOP Pin Connections
A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB NC NC A7 A6 A5 A4 A3 A2 A1 1 48 NC BYTE VSS DQ15A- 1 DQ7 DQ14 DQ6...
