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M29F100B Datasheet 1 Mbit 128kb X8 Or 64kb X16 / Boot Block Single Supply Flash Memory

Manufacturer: STMicroelectronics

Overview: M29F100T M29F100B 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.

General Description

The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply.

For Program and Erase operations the necessary high voltages are generated internally.

The device can also be programmed in standard programmers.

Key Features

  • pended,in orderto read data from another block or to program data in another block, and then resumed. When power is first applied or if.

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