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M59BW102

1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory

M59BW102 Features

* an interleaved access modality which allows extremely fast access time. The device is offered in TSOP40 (10 x 14mm) package. Figure 1. Logic Diagram VCC 16 A0-A15 W E G ALE M59BW102 16 DQ0-DQ15 VSS AI02763B March 2000 This is preliminary information on a new product now in development or under

M59BW102 General Description

The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a single 3V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in stan.

M59BW102 Datasheet (181.04 KB)

Preview of M59BW102 PDF

Datasheet Details

Part number:

M59BW102

Manufacturer:

STMicroelectronics ↗

File Size:

181.04 KB

Description:

1 mbit 64kb x16 / burst low voltage flash memory.
M59BW102 1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory PRELIMINARY DATA s 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUE.

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M59BW102 Mbit 64Kb x16 Burst Low Voltage Flash Memory ST Microelectronics

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