M59DR032B Datasheet - ST Microelectronics

M59DR032B 32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory

The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V V DD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. The device su.

M59DR032A M59DR032B 32 Mbit (2Mb x16, Dual Bank, Page) Low Voltage Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE VDD = VDDQ = 1.65V to 2.2V: for Program, Erase and Read VPP = 12V: optional Supply Voltage for fast Program and Erase s ASYNCHRONOUS PAGE MODE READ BGA Page Width: 4 words Page Access: 35ns Random Access: 100ns s PROGRAMMING TIME 10µs by Word typical Double Word Programming Option TSOP48 (N) 12 x 20mm FBGA48.

M59DR032B Features

* asymmetrically blocked architecture. M59DR032 has an array of 71 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. The memory also features an erase suspend allowing to read or

M59DR032B Datasheet (270.71 KB)