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2MBI800XNE120-50 Power Module (X series) 1200V / 800A / 2-in-1 package ■ Features Low VCE(sat) Low Inductance Module structure Solder pin terminals ■

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IGBT Module Series for Advanced-NPC Circuits Kosuke Komatsu † Takahito Harada † Yoshiyuki Kusunoki † ABSTRACT A series of insulated gate bipolar trans

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http://www.fujielectric.com/products/semiconductor/ 2MBI300VH-120-50 IGBT MODULE (V series) 1200V / 300A / 2 in one package Features High speed swi

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PRELIMINARY DATA SHEET 512MB Unbuffered DDR SDRAM DIMM EBD52UC8AKFA-5-E (64M words × 64 bits, 2 Ranks) Description The EBD52UC8AKFA is 64M words × 64

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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K5L2731CAM-D770 Preliminary MCP MEMORY MCP Specification 128Mb NOR Flash + 32Mb UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSU

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IGBT Module series for AT-NPC 3-level 12-in-1 Features Significant Low Power Loss and Size Reduction of Equipment Integrates 3-phase of AT-NPC 3-level

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H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5182GFR-xxC H5PS5182GFR-xxI H5PS5182GFR-xxL H5PS5182GFR-xxJ H5PS5162GFR-xxC H5PS5162GFR-xxI H5PS5162GFR-xxL H

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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19

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GS864018/32/36T-300/250/200/167 100-Pin TQFP Commercial Temp Industrial Temp 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 300 MHz–167 MHz 2.5 V

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GS864018/32/36T-300/250/200/167 100-Pin TQFP Commercial Temp Industrial Temp 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 300 MHz–167 MHz 2.5 V

Rating: 1 ★ (5 votes)

GS864018/32/36T-300/250/200/167 100-Pin TQFP Commercial Temp Industrial Temp 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 300 MHz–167 MHz 2.5 V

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M27C322 32 Mbit (2Mb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 80ns WORD-WIDE CONFIGURABLE 32 Mbit MASK RO

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M27V320 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM s 3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32

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SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to

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IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized I

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IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized I

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DATA SHEET www.DataSheet4U.com 512MB Unbuffered DDR2 SDRAM DIMM EBE51UD8AJWA (64M words × 64 bits, 1 Rank) Specifications • Density: 512MB • Organiz

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K7D323674A K7D321874A www.DataSheet4U.com 1Mx36 & 2Mx18 SRAM 32Mb A-die DDR SRAM Specification 153FCBGA with Pb & Pb-Free (RoHS compliant) INFORMA

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M0818L1A www.D

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