http://www.fujielectric.com/products/semiconductor.
Samsung Electronics
K5L2731CAM-D770 - 128Mb NOR Flash + 32Mb UtRAM
K5L2731CAM-D770 Preliminary MCP MEMORY MCP Specification 128Mb NOR Flash + 32Mb UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSU.
Fuji
2MBI100N-120 - IGBT MODULE ( N series )
IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized I.
Fuji Electric
2MBI400U4H-120 - IGBT
SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI400U4H-120 Spec. No. : MS5F 6038 Feb. 09 ’05 S.Miyashita Feb. 09 ’05 T.Miyasaka K.Yamada.
Fuji Electric
2MBI450U4E-120 - IGBT
SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI450U4E-120 Spec. No. : MS5F 6057 Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada.
Fuji Electric
2MBI600VE-060-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 2MBI600VE-060-50 IGBT MODULE (V series) 600V / 600A / 2 in one package Features High speed swit.
Fuji Electric
2MBI200U4B-120-50 - IGBT
SPECIFICATION Device Name Type Name : IGBT MODULE (RoHS compliant product) : 2MBI200U4B-120-50 Spec. No. : MS5F6577 May. 11 ’06 K.Muramatsu May. 1.
Zentel
A3R12E40CBF - 512Mb DDRII Synchronous DRAM
A3R12E30CBF A3R12E40CBF 512Mb DDRII Synchronous DRAM 512Mb DDRII SDRAM Specification A3R12E30CBF A3R12E40CBF Zentel Electronics Corp. Revision 1.2 .
ATO
AFND1208U1 - 512Mbit (64M x 8-Bit)NAND FLASH
512Mbit (64Mx8Bit)NAND FLASH 512Mb NAND FLASH AFND1208U1 Preliminary Confidential 1 512Mbit (64Mx8Bit)NAND FLASH Revision No. History Rev.00 Re.
Fuji Electric
2MBI300U4N-120-50 - IGBT
SPECIFICATION Device Name : Type Name : IGBT MODULE (RoHS compliant product) 2MBI300U4N-120-50 Spec. No. : MS5F 6509 Feb. 14 ’06 H.Kaneda Feb. 14.
AMICCOM
A7137 - 2.4G FSK/GFSK 10 dBm 2Mbps Transceiver
AMICCOM WWW.AVANTCOM.COM.TW service@avantcom.com.tw A7137 2.4G FSK/GFSK 10 dBm 2Mbps Transceiver Document Title A7137 Data Sheet, 2.4GHz FSK/GFSK .
Maxim Integrated
MAX3490E - 12Mbps and Slew-Rate-Limited True RS-485/RS-422 Transceivers
Click here for production status of specific part numbers. MAX3483E/MAX3485E/ MAX3486E/MAX3488E/ MAX3490E/MAX3491E 3.3V-Powered, ±15kV ESD-Protected,.
Micron
MT18HTF6472 - 512MB DDR2 SDRAM Registered DIMM
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM (RDIMM) MT18HTF6472 – 512MB MT18HTF12872(P) – 1GB MT18HTF.
Nanya Techology
NT5DS128M4CG - 512Mb DDR SDRAM
NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru.
Nanya Techology
NT5DS64M8CS - 512Mb DDR SDRAM
NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru.
Fuji
2MBI150SC-120 - IGBT MODULE
2MBI150SC-120 IGBT Module 1200V / 150A 2 in one-package Features · High speed switching · Voltage drive · Low inductance module structure Applicati.
Fuji
2MBI200N-060 - IGBT MODULE ( N series )
IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized I.
Fe
2MBI200UD-120 - IGBT MODULE U-Series
2MBI200UD-120 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1200V / 200A 2 in one-package Eq.
Samsung
K4H511638J - 512Mb J-die DDR SDRAM
Rev. 1.11, Aug. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP-(II) with Lead-Free & Halogen-Free (RoHS compliant) dat.
Hynix
H5PS5162GFR - 512Mb DDR2 SDRAM
H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5182GFR-xxC H5PS5182GFR-xxI H5PS5182GFR-xxL H5PS5182GFR-xxJ H5PS5162GFR-xxC H5PS5162GFR-xxI H5PS5162GFR-xxL H.
Fuji Electric
2MBI200VB-120-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 2MBI200VB-120-50 IGBT MODULE (V series) 1200V / 200A / 2 in one package Features High speed swi.
