M59MR032C - 32 Mbit 2Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.0V V DD supply for the circuitry.
For Program and Erase operations the necessary high voltages are generated internally.
The device su
M59MR032C M59MR032D 32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory s SUPPLY VOLTAGE VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read s s VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ Configurable Burst mode Read Page mode Read (4 Words Page) Random Access: 100ns LFBGA54 (ZC) 10 x 4 ball array µBGA46 (GC) 10 x 4 ball array BGA µBGA s PROGRAMMING TIME 10µs
M59MR032C Features
* asymmetrically blocked architecture. M59MR032 has an array of 71 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. The memory also features an erase suspend allowing to read or
