* asymmetrically blocked architecture. M59DR032 has an array of 71 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. The memory also features an erase suspend allowing to read or
M59DR032A Datasheet (270.71 KB)
M59DR032A
270.71 KB
32 mbit 2mb x16 / dual bank / page low voltage flash memory.
M59DR032A M59DR032B
32 Mbit (2Mb x16, Dual Bank, Page) Low Voltage Flash Memory
PRELIMINARY DATA
s
SUPPLY VOLTAGE
* VDD = VDDQ = 1.65V to 2.2.
📁 Related Datasheet
M59DR032B 32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory (ST Microelectronics)
M59DR008E 8 Mbit Low Voltage Flash Memory (STMicroelectronics)
M59DR008F 8 Mbit Low Voltage Flash Memory (STMicroelectronics)
M59DR016C 16 Mbit 1.8V Supply Flash Memory (STMicroelectronics)
M59DR016D 16 Mbit 1.8V Supply Flash Memory (STMicroelectronics)
M5911 N-Channel JFET Pairs (Siliconix)
M5912 N-Channel JFET Pairs (Siliconix)
M5913 COMBINED SINGLE CHIP PCM CODEC AND FILTER (ST Microelectronics)
M59330P LAN Transceiver (Renesas Technology)
M5938A Very Ultra-Low On-Resistance Load Switch (Global Mixed-mode Technology)
