GN25L95 (Semtech)
2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier
GN25L95
2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier with On-Chip Digital Diagnostic Monitoring
Main Features
• 100 mA bias curre
(135 views)
CY7C12411KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(52 views)
CY7C1243V18 (Cypress Semiconductor)
36-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18
36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
Features
• Separate independ
(48 views)
CY7C1243KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(45 views)
CY7C1245KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(45 views)
CY7C1241V18 (Cypress Semiconductor)
36-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18
36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
Features
• Separate independ
(44 views)
CY7C12451KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(43 views)
CY7C1241KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(43 views)
GS832036GT (GSI Technology)
36Mb Sync Burst SRAMs
Preliminary GS832018/32/36T-250/225/200/166/150/133
100-Pin TQFP Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
25
(43 views)
RFB1W (Futaba Electric)
Anti-Burst Fusible Resistor
ANTI-BURST FUSIBLE RESISTOR
RFB Series (RFB )
FEATURESFEATURES
gThe ANTI-BURST Type wire wound or film –Type fusible
g, resistors can prov
(42 views)
CY7C12431KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(41 views)
GS832018GT (GSI Technology)
36Mb Sync Burst SRAMs
Preliminary GS832018/32/36T-250/225/200/166/150/133
100-Pin TQFP Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
25
(40 views)
GS81302T11E (GSI Technology)
144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302T06/11/20/38E-500/450/400/350
165-Bump BGA Commercial Temp Industrial Temp
144Mb SigmaDDRTM-II+ Burst of 2 SRAM
500 MHz–350 MHz 1.8 V VDD
1.
(39 views)
AD5930 (Analog Devices)
Programmable Frequency Sweep and Output Burst Waveform Generator
www.DataSheet4U.com
Programmable Frequency Sweep and Output Burst Waveform Generator AD5930
FEATURES
Programmable frequency profile No external compo
(38 views)
IS61QDPB21M18A (ISSI)
18Mb QUADP (Burst 2) Synchronous SRAM
IS61QDPB21M18A/A1/A2 IS61QDPB251236A/A1/A2
1Mx18, 512Kx36 18Mb QUADP (Burst 2) Synchronous SRAM
(2.5 CYCLE READ LATENCY)
OCTOBER 2014
FEATURES
512
(37 views)
GS832018T (GSI Technology)
36Mb Sync Burst SRAMs
Preliminary GS832018/32/36T-250/225/200/166/150/133
100-Pin TQFP Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
25
(36 views)
GS832032GT (GSI Technology)
36Mb Sync Burst SRAMs
Preliminary GS832018/32/36T-250/225/200/166/150/133
100-Pin TQFP Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
25
(36 views)
MT45W2MW16B (Micron Semiconductor)
(MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory
www.DataSheet4U.com
ADVANCE‡
4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
BURST CellularRAMTM
Features
• Single device supports async
(35 views)
MT45W8MW16BGX (Micron Technology)
8MEG X 16 Async/Page/Burst CellularRAM Memory
www.DataSheet4U.com
PRELIMINARY‡
8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
128Mb BURST CellularRAMTM 1.5
Features
• Single device supports asy
(35 views)
GS81302S08GE (GSI Technology)
144Mb SigmaSIO DDR -II Burst of 2 SRAM
GS81302S08/09/18/36E-375/350/333/300/250
165-Bump BGA Commercial Temp Industrial Temp
144Mb SigmaSIOTM DDR -II Burst of 2 SRAM
375 MHz–250 MHz 1.8
(35 views)