GN25L95 (Semtech)
2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier
GN25L95
2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier with On-Chip Digital Diagnostic Monitoring
Main Features
• 100 mA bias curre
(183 views)
CY7C12411KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(61 views)
CY7C1243V18 (Cypress Semiconductor)
36-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18
36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
Features
• Separate independ
(58 views)
CY7C1241KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(57 views)
MT45W8MW16BGX (Micron Technology)
8MEG X 16 Async/Page/Burst CellularRAM Memory
www.DataSheet4U.com
PRELIMINARY‡
8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
128Mb BURST CellularRAMTM 1.5
Features
• Single device supports asy
(55 views)
CY7C1243KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(55 views)
CY7C1245KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(55 views)
GS832036GT (GSI Technology)
36Mb Sync Burst SRAMs
Preliminary GS832018/32/36T-250/225/200/166/150/133
100-Pin TQFP Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
25
(54 views)
CY7C12451KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(53 views)
GS832018GT (GSI Technology)
36Mb Sync Burst SRAMs
Preliminary GS832018/32/36T-250/225/200/166/150/133
100-Pin TQFP Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
25
(51 views)
CY7C12431KV18 (Cypress Semiconductor)
36-Mbit QDR II SRAM 4-Word Burst Architecture
36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C
(50 views)
MT45W2MW16B (Micron Semiconductor)
(MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory
www.DataSheet4U.com
ADVANCE‡
4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY
BURST CellularRAMTM
Features
• Single device supports async
(49 views)
CY7C1241V18 (Cypress Semiconductor)
36-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18
36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
Features
• Separate independ
(49 views)
L121A (SGS)
TRIAC/SCR BURST CONTROL
LINEAR INTEGRATED CIRCUIT
TRIAC/SCR BURST CONTROL
The L 121 A is a monolithic integrated circuit in 16-lead dual in-line plastic packa je. It incorpo
(47 views)
AT42QT1010 (Microchip)
Digital burst mode charge-transfer sensor
AT42QT1010
AT42QT1010 Data Sheet
Introduction
The AT42QT1010 is a digital burst mode charge-transfer sensor that is capable of detecting near proximit
(46 views)
IS61QDPB21M18A (ISSI)
18Mb QUADP (Burst 2) Synchronous SRAM
IS61QDPB21M18A/A1/A2 IS61QDPB251236A/A1/A2
1Mx18, 512Kx36 18Mb QUADP (Burst 2) Synchronous SRAM
(2.5 CYCLE READ LATENCY)
OCTOBER 2014
FEATURES
512
(46 views)
GS832032GT (GSI Technology)
36Mb Sync Burst SRAMs
Preliminary GS832018/32/36T-250/225/200/166/150/133
100-Pin TQFP Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
25
(46 views)
RFB1W (Futaba Electric)
Anti-Burst Fusible Resistor
ANTI-BURST FUSIBLE RESISTOR
RFB Series (RFB )
FEATURESFEATURES
gThe ANTI-BURST Type wire wound or film –Type fusible
g, resistors can prov
(45 views)
GS832018T (GSI Technology)
36Mb Sync Burst SRAMs
Preliminary GS832018/32/36T-250/225/200/166/150/133
100-Pin TQFP Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
25
(45 views)
GS832036T (GSI Technology)
36Mb Sync Burst SRAMs
Preliminary GS832018/32/36T-250/225/200/166/150/133
100-Pin TQFP Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
25
(45 views)