IS61QDB24M18 Description
The 72Mb IS61QDB22M36 and IS61QDB24M18 are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed.
IS61QDB24M18 Key Features
- 2M x 36 or 4M x 18
- On-chip delay-locked loop (DLL) for wide data valid window
- Separate read and write ports with concurrent read and write operations
- Synchronous pipeline read with early write operation
- Double data rate (DDR) interface for read and write input ports
- Fixed 2-bit burst for read and write operations
- Clock stop support
- Two input clocks (K and K) for address and control registering at rising edges only
- Two input clocks (C and C) for data output control
- Two echo clocks (CQ and CQ) that are delivered simultaneously with data