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IS61QDB21M18C - 18Mb QUAD Synchronous SRAM

General Description

The 18Mb IS61QDB251236C and IS61QDB21M18C are synchronous, high-performance CMOS static random access memory (SRAM) devices.

These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround.

Key Features

  • 512Kx36 and 1Mx18 configuration available.
  • On-chip Delay-Locked Loop (DLL) for wide data valid window.
  • Separate independent read and write ports with concurrent read and write operations.
  • Synchronous pipeline read with EARLY write operation.
  • Double Data Rate (DDR) interface for read and write input ports.
  • Fixed 2-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K#) for address and control registering at rising ed.

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Full PDF Text Transcription for IS61QDB21M18C (Reference)

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IS61QDB21M18C IS61QDB251236C 1Mx18, 512Kx36 18Mb QUAD (Burst 2) Synchronous SRAM JANUARY 2021 FEATURES  512Kx36 and 1Mx18 configuration available.  On-chip Delay-Locked...

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ES  512Kx36 and 1Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write input ports.  Fixed 2-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two output clocks (C and C#) for data output control.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.  +1.8V core powe