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FM18L08 - 256Kb 2.7-3.6V Bytewide FRAM Memory

General Description

The FM18L08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM.

Key Features

  • 256K bit Ferroelectric Nonvolatile RAM.
  • Organized as 32,768 x 8 bits.
  • 10 year data retention at 85° C.
  • Unlimited read/write cycles.
  • NoDelay™ write.
  • Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM.
  • No battery concerns.
  • Monolithic reliability.
  • True surface mount solution, no rework steps.
  • Superior for moisture, shock, and vibration.
  • Resistant to negative voltage undershoots SRA.

📥 Download Datasheet

Datasheet Details

Part number FM18L08
Manufacturer Unknown Manufacturer
File Size 80.49 KB
Description 256Kb 2.7-3.6V Bytewide FRAM Memory
Datasheet download datasheet FM18L08 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85° C • Unlimited read/write cycles • NoDelay™ write • Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM • No battery concerns • Monolithic reliability • True surface mount solution, no rework steps • Superior for moisture, shock, and vibration • Resistant to negative voltage undershoots SRAM & EEPROM Compatible • JEDEC 32Kx8 SRAM & EEPROM pinout • 70 ns access time • 130 ns cycle time • Equal access & cycle time for reads and writes Low Power Operation • 2.7V to 3.