FM18L08 Datasheet | Unknown Manufacturer

Preliminary 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM - Organized as 32,768 x 8 bits - 10 year data retention at 85° C - Unlimited read/write cycles - No Delay™ write - Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM - No battery concerns - Monolithic reliability - True surface mount solution, no rework steps - Superior for moisture, shock, and vibration - Resistant to negative voltage undershoots SRAM & EEPROM patible - JEDEC 32Kx8 SRAM & EEPROM pinout - 70 ns access time - 130 ns cycle time - Equal access & cycle time for reads and writes Low Power Operation - 2.7V to 3.6V operation - 15 m A active current - 15 µA standby current Industry Standard Configuration - Industrial temperature -40° C to +85° C - 28-pin SOP or DIP Pin Configuration Description The FM18L08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design plexities of battery-backed SRAM. Fast-write time and practically unlimited read/write endurance make it superior to other types of nonvolatile memory and a good substitute for ordinary SRAM. In-system operation of the FM18L08 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM18L08 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions. These capabilities make the FM18L08 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package...