GFP5N60 Description
(概述) These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP5N60是增强型N沟道功率场效应管，采用平面条形DMOS 工艺生产制造。 This advanced technology has been especially tailored to minimize on - state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and mutaion mode .These devices are well suited for high efficiency switch mode...