Datasheet Details
| Part number | GFP8N60 |
|---|---|
| Manufacturer | Unknown Manufacturer |
| File Size | 165.48 KB |
| Description | N-Channel enhancement mode power field effect Transistors |
| Datasheet |
 GFP8N60 Datasheet
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| Part number | GFP8N60 |
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| Manufacturer | Unknown Manufacturer |
| File Size | 165.48 KB |
| Description | N-Channel enhancement mode power field effect Transistors |
| Datasheet |
GFP8N60 Datasheet
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(概述) These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology.
GFP8N60是增强型N沟道功率场效应管，采用平面条形DMOS 工艺生产制造。 This advanced technology has been especially tailored to minimize on - state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and commutaion mode .These devices are well suited for high efficiency switch mode power supply，electronic lamp ballasts based on half bridge topology.
GFP8N60具有低导通电阻、优越的开关特性以及抗雪崩击穿 能力，适合用于高效开关电源、电子镇流器等。 TO-220 1.Gate 2.Drain 3.Source Absolute Maximum ratings（极限参数，除非另有规定，T=25 ℃ ） Characteristics（参数） 漏源反向击穿电压 连续漏极电流 栅源电压 雪崩能量 耗散功率 储存温度 热阻(结到壳） 正向压降 Symbol（符号） BVDSS ID VGS EAS PD TSTG RθJC VSD Value(额定值） 600 7.5 + 30 230 147 -55 ~150 0.85 1.4 Units(单位) V A V mJ W ℃ ℃/ W V Characteristics 参数名称 开启电压 栅源漏电流 漏源漏电流 导通电阻 跨导 输入电容 输出电容 传输电容 导通延迟时间 上升时间 下降延迟时间 下降时间 栅极存储电荷 栅源电荷 栅漏电荷 Symbol (符号） VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min.
GFP8N60 General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| Haiso | GFP8N60 | N-channel power FET | Haiso |
| Part Number | Description |
|---|---|
| GFP5N60 | N-Channel enhancement mode power field effect Transistors |