GLT5160L16 dram equivalent, 16m (2-bank x 524288-word x 16-bit) synchronous dram.
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65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Descriptio.
requiring high performance memories.
CAS -Before- RAS Refresh, Hidden Refresh and Test Mode Capability. ∗ 256 refresh c.
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The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and WORD WRITE access cycles via two WE pins. The GLT41316 has symmetric address and accepts 256-cycle .
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