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DRAM

DRAM DataSheet

Micron

MT18LSDT12872A - Synchronous DRAM Module

 · 114 Hits • PC100- and PC133-compliant • 168-pin, dual in-line memory module (DIMM) • Unbuffered, ECC-optimized pinout • 128MB (16 Meg x 72) and 256MB (32 Meg x...
Texas Instruments

TMS44C256 - 4-Bit DRAM

 · 31 Hits ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Elect...
Hynix Semiconductor

HY514264B - 256K x 16 Extended Data Out Mode DRAM

 · 20 Hits ...
Micon

MT41J256M16 - DDR3 SDRAM

 · 19 Hits DDR3 SDRAM MT41J1G4 – 128 Meg x 4 x 8 banks MT41J512M8 – 64 Meg x 8 x 8 banks MT41J256M16 – 32 Meg x 16 x 8 banks Features • • • • • • • • • • • • • ...
Infineon Technologies

HYB39S256800DC - (HYB39S256xxxD) 256 MBit Synchronous DRAM

 · 18 Hits Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.Da...
ESMT

M12L128168A-6TG - 2M x 16 Bit x 4 Banks Synchronous DRAM

 · 18 Hits y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key programs - CAS Late...
Nanya

NT5CC256M16ER - Commercial and Industrial DDR3 4Gb SDRAM

 · 18 Hits  Basis DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM  Data I...
Samsung

K4B4G0446D - 4Gb D-die DDR3 SDRAM

 · 17 Hits ...
Qimonda AG

HYS72T256220HP3-B - 240-Pin Registered DDR2 SDRAM Modules

 · 17 Hits • • • • • • • • • • Programmable self refresh rate via EMRS2 setting Programmable partial array refresh via EMRS2 settings DCC enabling via EMRS2 sett...
Nanya Techology

NT5DS64M4BF - (NT5DSxxMxBx) 256Mb DDR SDRAM

 · 16 Hits CAS Latency and Frequency CAS Latency 3 2.5 Maximum Operating Frequency (MHz) DDR400B (-5T) 200 166 • • • • • • • • • • • • • • Double data rate arc...
Hynix Semiconductor

H55S1222EFP-75M - 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O

 · 15 Hits ● Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) ● ● MULTIBANK ...
Samsung

K4B2G1646E - 2Gb E-die DDR3 SDRAM

 · 15 Hits ...
Samsung

K4B1G0446F - 1Gb F-die DDR3 SDRAM

 · 15 Hits ...
ESMT

M12L128168A-5TG - 2M x 16 Bit x 4 Banks Synchronous DRAM

 · 15 Hits y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key programs - CAS Late...
Micron

MT60B4G4 - 16Gb DDR5 SDRAM

 · 15 Hits 16Gb DDR5 SDRAM Addendum MT60B4G4, MT60B2G8, MT60B1G16 Die Revision A Features This document describes the product specifications that are unique t...
Micron

MT9LSDT1672A - SYNCHRONOUS DRAM MODULE

 · 15 Hits • PC100- and PC133-compliant • 168-pin, dual in-line memory module (DIMM) • Unbuffered, ECC-optimized pinout • 128MB (16 Meg x 72) and 256MB (32 Meg x...
Micron Technology

MT4264 - 64K x 1 DRAM

 · 14 Hits ...
Etron Technology

EM68916DVAA - 8M x 16 Mobile DDR Synchronous DRAM

 · 14 Hits Fast clock rate: 166/133 MHz Differential Clock CK & CK Bi-directional DQS Four internal banks, 2M x 16-bit for each bank Edge-aligned with read data,...
Hynix

HY57V641620FTP - Synchronous DRAM Memory 64Mbit

 · 14 Hits • • • • • • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All i...
Hynix Semiconductor

H5TC2G83FFR-xxA - 2Gb DDR3L SDRAM

 · 14 Hits and Ordering Information FEATURES • VDD=VDDQ=1.35V + 0.100 / - 0.067V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe ...
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