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Motorola
MCM6665A - 64K DRAM
® MOTOROLA MCM6665A MOS 64K BIT DYNAMIC RAM The MCM6665A is a 65,536 bit, high-speed, dynamic RandomAccess Memory. Organized as 65,536 one-bit word.
Micron
MT60B1G16 - 16Gb DDR5 SDRAM
16Gb DDR5 SDRAM Die Rev A Features 16Gb DDR5 SDRAM Addendum MT60B4G4, MT60B2G8, MT60B1G16 Die Revision A Features This document describes the produ.
NEC Electronics
UPD424256 - 256K x 4-Bit CMOD DRAM
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Micron Technology
MT4264-15 - 64K x 1 DRAM
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Micron
MT53E256M32D2 - Automotive LPDDR4/LPDDR4X SDRAM
Micron Confidential and Proprietary Preliminary‡ 200b: x32 Automotive LPDDR4/LPDDR4X SDRAM Features Automotive LPDDR4/LPDDR4X SDRAM MT53E256M32D2 F.
Micron Technology
MT4264 - 64K x 1 DRAM
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Mitsubishi
M5M44256BP-8 - Fast Page Mode 1M-Bit DRAM
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Samsung
K4E6E304EB - 16Gb DDP LPDDR3 SDRAM
Rev. 0.0, May. 2015 K4E6E304EB Target 16Gb DDP LPDDR3 SDRAM 178FBGA, 11x11.5 256M x32 (32M x32 x 8banks) + 256M x32 (32M x32 x 8banks) This document a.
Micron
MT60B4G4 - 16Gb DDR5 SDRAM
16Gb DDR5 SDRAM Die Rev A Features 16Gb DDR5 SDRAM Addendum MT60B4G4, MT60B2G8, MT60B1G16 Die Revision A Features This document describes the produ.
Hyundai Electronics
HY5117400B - (HY5116400B / HY5117400B) 4M x 4-Bit CMOS DRAM
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Mitsubishi Electric Semiconductor
M5M4256AP-10 - Page Mode 262144-Bit DRAM
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Micron Technology
MT41K512M16 - 32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM
8Gb: x16 TwinDie DDR3L-RS SDRAM Description TwinDie™ 1.35V DDR3L-RS SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description The 8Gb (TwinDie™) 1.35V DD.
Mitsubishi
M5M4464P-12 - 256K-Bit DRAM
MITSUBISHI LSls MsM4464P-12, -15 262 144-BIT(65 536-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is family of 65536-word by 4-bit dynamic RAMs, fabric.
United Technologies Mostek
MK4564-20 - 65536 x 1-Bit DRAM
l UNITED TECHNOLOGIES MOSTEK MEMORY COMPONENTS 65,536 x 1-BIT DYNAMIC RAM MK4564(P/N/J/E)-15/20 FEATURES o Recognized industry standard 16-pin conf.
Micron
MT60B2G8 - 16Gb DDR5 SDRAM
16Gb DDR5 SDRAM Die Rev A Features 16Gb DDR5 SDRAM Addendum MT60B4G4, MT60B2G8, MT60B1G16 Die Revision A Features This document describes the produ.
ETC
MB81C4256-10 - CMOS 1M-Bit DRAM
w c . C-MOS 1M (262,144x4)-BIT DYNAMIC RAM U 4 t e e h S a at .D w w ********** - TOP VIEW DQ1 1 DQ2 2 GND 20 19 DQ4 18 DQ3 17 CAS 16 OE 15 A8 14 A7 .
Hynix Semiconductor
HY57V561620FTP-H - 256M (16M x 16bit) Hynix SDRAM Memory
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This.
ESMT
M15T2G16128A - DDR3 SDRAM
ESMT DDR3(L) SDRAM Feature Interface and Power Supply ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) ˗ SSTL_135: VDD/VDDQ = 1.35V(-0.067V/+0.1V) JEDEC DDR3(L.
