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PHOTODIODE ARRAYS
SPECIFICATIONS
Part Number Number of Elements Element Dimensions Pitch Responsivity Shunt Resistance1 Min. (MΩ) 600 Dark Current1 at 10V Max. (nA) 2.7 Capacitance Uniformity2 at 0V Max. (pF) 10 Typ. (%) ±5
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NEP3
SD 219-51-03-301
12
(mm) 0.965 x 2.01 0.508 x 5.89
(mm) 1.01
Min. (A/W) 0.35 @ 633m 0.10 @ 365nm 0.22 @ 500nm 0.33 @ 700nm
Typ. (W/√Hz) 1.4x10-14
SD 484-52-05-301
32
0.635
50
0.5
500
±5
5.2x10-14
* All specifications are per element. All values at 23°C 1. Dark Current and Shunt Resistance vary with temperature as follows; for T≠23°C, IDT = ID23 * 1.09∆T,
RSHT= RSH23 * 0.9∆T, where ∆T=(T-23) and ID23 and RSH23 are values at 23°C. 2. 3.
SD484-52-05-301 Datasheet
