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SHF-0289 - 1.0 Watt GaAs HFET

SHF-0289 Description

Product .
Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package.

SHF-0289 Features

* Patented GaAs Heterostructure FET Technology
* +30dBm Output Power at 1dB Compression
* +46dBm Output IP3
* High Drain Efficiency: Up to 40% at Class AB

SHF-0289 Applications

* Analog and Digital Wireless System
* Cellular PCS, CDPD, Wireless Data, Pagers GMax(dB) 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Frequency (GHz) Electrical Specifications at Ta = 25o C Symbol Parameters: Test Conditions 2 Units Min. Typ. Max. |S21| Insertion Power Gain Vds

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Datasheet Details

Part number
SHF-0289
Manufacturer
ETC
File Size
529.98 KB
Datasheet
SHF-0289_ETC.pdf
Description
1.0 Watt GaAs HFET

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1.0 Watt GaAs HFET ETC
ETC SHF-0289-like datasheet