SHF-0289 Datasheet | Unknown Manufacturer

Description Stanford Microdevices’ SHF-0289 series is a high performance Ga As Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1d B pression for the SHF-0289 is +30d Bm when biased for Class AB operation at 8V and 250m A. The +46 d Bm third order intercept makes it ideal for high dynamic range, high intercept point requirements. They are well suited for use in both analog and digital wireless munication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers. Adequate heat sinking must be provided for this part to avoid exceeding the maximum junction temperature. Methods include the use of screws near the device, and filled vias beneath the part to the ground plane. Refer to “Mounting and Thermal Considerations” section on page 7 for more information. Maximum Available Gain vs Frequency Vds = 8V, Idq = 250m A 30 25 20 DC-3 GHz, 1.0 Watt Ga As HFET Preliminary Preliminary Product Features - Patented Ga As Heterostructure FET Technology - +30d Bm Output Power at 1d B pression - +46d Bm Output IP3 - High Drain Efficiency: Up to 40% at Class AB - 13 d B Gain at 900MHz (Application circuit) - 13 d B Gain at 1900MHz (Application circuit) Applications - Analog and Digital Wireless System - Cellular PCS, CDPD, Wireless Data, Pagers GMax(d B) 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Frequency (GHz) Electrical Specifications at Ta = 25o C Symbol Parameters: Test Conditions Units Min. Typ. Max. |S21| Insertion Power Gain Vds = 8.0V, I dq= 250m A, ZS=ZL=50 Ohms Maximum Available Gain Vds = 8.0V, I dq= 250m A, ZS=ZS OPT, ZL=ZL OPT Output Third Order Intercept Point (Device is tuned for maximum power output) Saturated Drain Current Vds = 3.0V, Vgs= 0V Tranconductance: Vds = 3.0V, Vgs = 0V Pinch-Off Voltage: Vds = 2.0V, I d = 1.2m A Gate-to-Source...