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SSM4435 Datasheet Preview

SSM4435 Datasheet

P-Channel E nhancement Mode MOS FET

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SSM4435 pdf
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SSS S S M4435
S outh S ea S emiconductor
J ULY ,2004 V er1.1
P -C hannel E nhancement Mode MOS FE T
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W ) Max
-30V
-8A
20 @ VGS = -10V
35 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
DDDD
8 7 65
5
S O-8
1
1 234
S SS G
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-P ulsed b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
25
-8
-40
-1.7
2.5
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
50
C /W
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SSM4435 Datasheet Preview

SSM4435 Datasheet

P-Channel E nhancement Mode MOS FET

No Preview Available !

SSM4435 pdf
www.DataSheet4U.com
S S M4435
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ C Max Unit
OFF CHARACTERISTICS
5 Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30
Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V
Gate-Body Leakage
ON CHARACTERISTICS b
IGSS VGS = 25V, VDS =0V
V
-1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1 -1.6 -3 V
Drain-S ource On-S tate R esistance R DS(ON)
VGS = -10V, ID =-8.0A
VGS = -4.5V, ID = -5.0A
15 20 m-ohm
22 35 m-ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
VDS = -5V, VGS = -10V -20
VDS =-15V, ID = - 8.0A
6
VDS =-15V, VGS = 0V
f =1.0MHZ
1199
362
137
VD = -15V,
ID = -1A,
VGEN = - 10V,
R GEN = 6 -ohm
17.6
17.4
169
95.4
A
S
PF
PF
PF
ns
ns
ns
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg VDS=-15V, ID=-8A,VGS=-10V
VDS=-15V, ID=-8A,VGS=-4.5V
Qgs VDS =-15V, ID = -8A,
Qgd VGS =-10V
33.6
17.3
3.3
8.1
nC
nC
nC
nC
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Part Number SSM4435
Description P-Channel E nhancement Mode MOS FET
Maker ETC
Total Page 7 Pages
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