ESN4838 mosfet equivalent, n-channel mosfet.
* 30V, RDS(ON)=7.5mΩ(Typ.) @VGS=10V RDS(ON)=12.0mΩ(Typ.) @VGS=4.5V
* Use trench MOSFET technology
* High density cell design for low RDS(on)
* Material: .
* PWM applications
* Load switch
* Power management in portable/desktop PCs
* DC/DC conversion
100% UIS.
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