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Elite Semiconductor

F25D08QA Datasheet Preview

F25D08QA Datasheet

8 Mbit Serial Flash Memory

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ESMT
Flash
„ FEATURES
y Single supply voltage 1.65~2V
y Speed
- Fast Read for SPI mode
- Read max frequency: 33MHz
- Fast Read max frequency: 104MHz
- Fast Read Dual/Quad max frequency: 84MHz/104MHz
(168MHz equivalent Dual SPI;
416MHz equivalent Quad SPI)
- Fast Read for QPI mode
- Fast Read max frequency: 84MHz
- Fast Read Quad max frequency: 104MHz
(416MHz equivalent Quad QPI)
- 8/ 16/ 32/ 64 byte Wrap-Around Burst Read Mode
y Low power consumption
- Active current: 15mA (typ.)
- Standby current: 30 μ A (typ.)
- Deep Power Down current: 5 μ A (typ.)
y Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
y Program
- Page programming time: 0.4 ms (typical)
y Page Programming
- 256 byte per programmable page
F25D08QA
8 Mbit Serial Flash Memory
with Dual and Quad
y Program/Erase Suspend
y Erase
- Chip Erase time 2 sec (typical)
- 64K bytes Block Erase time 130 ms (typical)
- 32K bytes Block Erase time 100 ms (typical)
- 4K bytes Sector Erase time 30 ms (typical)
y Status and Security Register Feature
y Command Reset
y Advanced Security Features
- Flexible Block Protection (BP0-BP3)
y Lockable 512 bytes OTP security sector
y SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
y Support Serial Flash Discoverable Parameters (SFDP) mode
y Write Protect ( WP )
y Hold Pin ( HOLD )
y All Pb-free products are RoHS-Compliant
„ ORDERING INFORMATION
Product ID
F25D08QA –104PIG
F25D08QA –104PAIG
F25D08QA –104VIG
F25D08QA –104HIG
Speed
104MHz
104MHz
104MHz
104MHz
Package
8-lead
SOIC
8-lead
SOIC
8-lead
VSOP
8-contact
WSON
150 mil
200 mil
150 mil
6x5 mm
Comments
Pb-free
Pb-free
Pb-free
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2013
Revision: 1.1
1/69




Elite Semiconductor

F25D08QA Datasheet Preview

F25D08QA Datasheet

8 Mbit Serial Flash Memory

No Preview Available !

ESMT
F25D08QA
„ GENERAL DESCRIPTION
The F25D08QA is a 8 Megabit, 1.8V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), a Dual/Quad SPI and QPI. ESMT’s
memory devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 4,096 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
is divided into 256 uniform sectors with 4K byte each; 32 uniform
blocks with 32K byte each; 16 uniform blocks with 64K byte each.
Sectors can be erased individually without affecting the data in
other sectors. Blocks can be erased individually without affecting
the data in other blocks. Whole chip erase capabilities provide
the flexibility to revise the data in the device. The device has
Sector, Block or Chip Erase but no page erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
„ FUNCTIONAL BLOCK DIAGRAM
Page Address
Latch / Counter
High Voltage
Generator
Status
Register
Byte Address
Latch / Counter
Memory
Array
Page Buffer
Y-Decoder
Command and Conrol Logic
Serial Interface
CE SCK
SI
SO WP HOLD
(SIO0) (SIO1) (SIO2) (SIO3)
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2013
Revision: 1.1
2/69


Part Number F25D08QA
Description 8 Mbit Serial Flash Memory
Maker Elite Semiconductor
Total Page 30 Pages
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