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F59D1G81A Datasheet - Elite Semiconductor

1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

F59D1G81A Features

* Voltage Supply: 1.8V (1.7 V ~ 1.95V)

* Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit

* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era

F59D1G81A General Description

The device is a 128Mx8bit with spare 4Mx8bit capacity (or 64Mx16bit with spare 2Mx16bit capacity). The device is offered in 1.8V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased in.

F59D1G81A Datasheet (1.17 MB)

Preview of F59D1G81A PDF

Datasheet Details

Part number:

F59D1G81A

Manufacturer:

Elite Semiconductor

File Size:

1.17 MB

Description:

1 gbit (128m x 8/ 64m x 16) 1.8v nand flash memory.

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TAGS

F59D1G81A Gbit 128M 64M 1.8V NAND Flash Memory Elite Semiconductor

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