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F59D1G81A Datasheet 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

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General Description

The device is a 128Mx8bit with spare 4Mx8bit capacity (or 64Mx16bit with spare 2Mx16bit capacity).

The device is offered in 1.8V VCC Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Overview

ESMT Flash.

Key Features

  • Voltage Supply: 1.8V (1.7 V ~ 1.95V).
  • Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit.
  • Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word.
  • Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (.

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More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

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