F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Elite Semiconductor

Datasheet Details

Part number	F59L1G81A
Manufacturer	Elite Semiconductor
File Size	1.00 MB
Description	1 Gbit (128M x 8) 3.3V NAND Flash Memory
Datasheet	F59L1G81A-EliteSemiconductor.pdf

Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity.

z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes z Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 200us (Typ. ) - Block Erase time: 1.5ms (Typ. ) z Command/Address/Data Multiplexed I/O Port z Hardware Data P.

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Other Datasheets by Elite Semiconductor

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Published: Feb 16, 2016 |