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M13S128168A Datasheet 2M x 16 Bit x 4 Banks Double Data Rate SDRAM

Manufacturer: Elite Semiconductor Memory Technology

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M13S128168A 2m x 16 bit x 4 banks double data rate sdram by Elite Semiconductor Memory Technology - Datasheet Preview

Datasheet Details

Part number	M13S128168A
Manufacturer	Elite Semiconductor Memory Technology
File Size	1.76 MB
Description	2M x 16 Bit x 4 Banks Double Data Rate SDRAM
Datasheet	M13S128168A Datasheet

Overview

ESMT M13S128168A (2S) DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate.

Key Features

Double-data-rate architecture, two data transfers per clock cycle.
Bi-directional data strobe (DQS).
Differential clock inputs (CLK and CLK ).
DLL aligns DQ and DQS transition with CLK transition.
Four bank operation.
CAS Latency : 2, 2.5, 3.
Burst Type : Sequential and Interleave.
Burst Length : 2, 4, 8.
All inputs except data & DM are sampled at the rising edge of the system clock (CLK).
Data I/O transitions on both edges of data strobe (DQS).

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