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EBE11FD8AGFN Datasheet 1GB Fully Buffered DIMM

Manufacturer: Elpida Memory

Overview: PRELIMINARY DATA SHEET www.DataSheet4U.com 1GB Fully Buffered DIMM EBE11FD8AGFD EBE11FD8AGFN Specifications • Density: 1GB • Organization  128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm  Advanced Memory Buffer (AMB): 655-ball FCBGA  Lead-free (RoHS compliant) • Power supply  DDR2 SDRAM: VDD = 1.8V ± 0.1V  AMB: VCC = 1.5V + 0.075V/−0.045 • Data rate: 667Mbps/533Mbps (max.) • Four internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms  Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.

Download the EBE11FD8AGFN datasheet PDF. This datasheet also includes the EBE11FD8AGFD variant, as both parts are published together in a single manufacturer document.

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Datasheet Details

Part number EBE11FD8AGFN
Manufacturer Elpida Memory
File Size 225.78 KB
Description 1GB Fully Buffered DIMM
Download EBE11FD8AGFN Download (PDF)

Key Features

  • JEDEC standard Raw Card B Design.
  • Industry Standard Advanced Memory Buffer (AMB).
  • High-speed differential point-to-point link interface at 1.5V (JEDEC draft spec)  14 north-bound (NB) high speed serial lanes  10 south-bound (SB) high speed serial lanes.
  • Various features/modes:  MemBIST and IBIST test functions  Transparent mode and direct access mode for DRAM testing  Interface for a thermal sensor and status indicator.
  • Channel error detection a.

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