EBE11FD8AHFE - 1GB Fully Buffered DIMM

Features

JEDEC standard Raw Card B Design.
Industry Standard Advanced Memory Buffer (AMB).
High-speed differential point-to-point link interface at 1.5V (JEDEC draft spec)  14 north-bound (NB) high speed serial lanes  10 south-bound (SB) high speed serial lanes.
Various features/modes:  MemBIST and IBIST test functions  Transparent mode and direct access mode for DRAM testing  Interface for a thermal sensor and status indicator.
Channel error detection a.

Elpida Memory

Datasheet Details

Part number	EBE11FD8AHFE
Manufacturer	Elpida Memory
File Size	226.74 KB
Description	1GB Fully Buffered DIMM
Datasheet	EBE11FD8AHFE Datasheet
Additional preview pages of the EBE11FD8AHFE datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET www.DataSheet4U.com 1GB Fully Buffered DIMM EBE11FD8AHFT EBE11FD8AHFE EBE11FD8AHFL Specifications • Density: 1GB • Organization  128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm  Advanced Memory Buffer (AMB): 655-ball FCBGA  Lead-free (RoHS compliant) • Power supply  DDR2 SDRAM: VDD = 1.8V ± 0.1V  AMB: VCC = 1.5V + 0.075V/−0.045 • Data rate: 667Mbps/533Mbps (max.

Published: Mar 21, 2010 |