EBE11FD8AGFN - 1GB Fully Buffered DIMM

This page provides the datasheet information for the EBE11FD8AGFN, a member of the EBE11FD8AGFD 1GB Fully Buffered DIMM family.

Features

JEDEC standard Raw Card B Design.
Industry Standard Advanced Memory Buffer (AMB).
High-speed differential point-to-point link interface at 1.5V (JEDEC draft spec)  14 north-bound (NB) high speed serial lanes  10 south-bound (SB) high speed serial lanes.
Various features/modes:  MemBIST and IBIST test functions  Transparent mode and direct access mode for DRAM testing  Interface for a thermal sensor and status indicator.
Channel error detection a.

Elpida Memory

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Datasheet Details

Part number	EBE11FD8AGFN
Manufacturer	Elpida Memory
File Size	225.78 KB
Description	1GB Fully Buffered DIMM
Datasheet	EBE11FD8AGFN Datasheet
Additional preview pages of the EBE11FD8AGFN datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET www.DataSheet4U.com 1GB Fully Buffered DIMM EBE11FD8AGFD EBE11FD8AGFN Specifications • Density: 1GB • Organization  128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm  Advanced Memory Buffer (AMB): 655-ball FCBGA  Lead-free (RoHS compliant) • Power supply  DDR2 SDRAM: VDD = 1.8V ± 0.1V  AMB: VCC = 1.5V + 0.075V/−0.045 • Data rate: 667Mbps/533Mbps (max.

Published: Mar 21, 2010 |