Datasheet Details
| Part number | EDE5108ABSE |
|---|---|
| Manufacturer | Elpida Memory |
| File Size | 697.92 KB |
| Description | (EDE51xxABSE) 512M bits DDR2 SDRAM |
| Datasheet |
 EDE5108ABSE Datasheet
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Description
The EDE5104ABSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks.
The EDE5108ABSE is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks.
They are packaged in 64-ball FBGA (µBGA) package.
Features
- Power supply: VDD, VDDQ = 1.8V ± 0.1V.
- Double-data-rate architecture: two data transfers per clock cycle.
- Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver.
- DQS is edge aligned with data for READs: centeraligned with data for WRITEs.
- Differential clock inputs (CK and /CK).
- DLL aligns DQ and DQS transitions with CK transitions.
- Commands entered on e.