(ede51xxabse) 512m bits ddr2 sdram.
* Power supply: VDD, VDDQ = 1.8V ± 0.1V
* Double-data-rate architecture: two data transfers per clock cycle
* Bi-directional, differential data strobe (DQS an.
The EDE5104ABSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108ABSE is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks. They are packaged in 64-ball FBGA (µBGA) package. The EDE5116ABSE.
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