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EDE5108AESK - (EDE510xAESK) 512M bits DDR2 SDRAM

Description

The EDE5104AESK is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks.

The EDE5108AESK is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks.

They are packaged in 60-ball FBGA (µBGA) package.

Features

  • Power supply: VDD, VDDQ = 1.8V ± 0.1V.
  • Double-data-rate architecture: two data transfers per clock cycle.
  • Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver.
  • DQS is edge aligned with data for READs: centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transitions.
  • Commands entered on e.

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Datasheet Details

Part number EDE5108AESK
Manufacturer Elpida Memory
File Size 680.50 KB
Description (EDE510xAESK) 512M bits DDR2 SDRAM
Datasheet download datasheet EDE5108AESK Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET 512M bits DDR2 SDRAM EDE5104AESK (128M words × 4 bits) EDE5108AESK (64M words × 8 bits) Description The EDE5104AESK is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108AESK is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks. They are packaged in 60-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V ± 0.
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