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EDS2508APTA-TI - 256M bits SDRAM WTR (Wide Temperature Range)

Description

The EDS2504AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks.

The EDS2508 AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks.

The EDS2516 AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks.

Features

  • 3.3V power supply Clock frequency: 133MHz (max. ) LVTTL interface Single pulsed /RAS 4 banks can operate simultaneously and independently.
  • Burst read/write operation and burst read/single write operation capability.
  • Programmable burst length (BL): 1, 2, 4, 8, full page.
  • 2 variations of burst sequence  Sequential (BL = 1, 2, 4, 8)  Interleave (BL = 1, 2, 4, 8).
  • Programmable /CAS latency (CL): 2, 3.
  • Byt.

📥 Download Datasheet

Datasheet Details

Part number EDS2508APTA-TI
Manufacturer Elpida Memory
File Size 544.73 KB
Description 256M bits SDRAM WTR (Wide Temperature Range)
Datasheet download datasheet EDS2508APTA-TI Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET 256M bits SDRAM WTR (Wide Temperature Range) EDS2504APTA-TI (64M words × 4 bits) EDS2508APTA-TI (32M words × 8 bits) EDS2516APTA-TI (16M words × 16 bits) Description The EDS2504AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54pin plastic TSOP (II). Pin Configurations /xxx indicates active low signal.
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