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UPD4564163 - (UPD4564841/441/163) 64M-bit SDRAM

Download the UPD4564163 datasheet PDF. This datasheet also covers the UPD4564841 variant, as both devices belong to the same (upd4564841/441/163) 64m-bit sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

Key Features

  • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge.
  • Pulsed interface.
  • Possible to assert random column address in every cycle.
  • Quad internal banks controlled by A12 and A13 (Bank Select).
  • Byte control (×16) by LDQM and UDQM.
  • Programmable Wrap sequence (Sequential / Interleave).
  • Programmable burst length (1, 2, 4, 8 and full page).
  • Programmable /CAS latency (2 and 3).
  • Automatic prech.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (UPD4564841_ElpidaMemory.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number UPD4564163
Manufacturer Elpida Memory
File Size 919.99 KB
Description (UPD4564841/441/163) 64M-bit SDRAM
Datasheet download datasheet UPD4564163 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL). These products are packaged in 54-pin TSOP (II).