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EN29GL064 Datasheet Preview

EN29GL064 Datasheet

64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory

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EN29GL064
EN29GL064
64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory
Page mode Flash Memory, CMOS 3.0 Volt-only
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
High performance
- Access times as fast as 70 ns
8-word/16-byte page read buffer
16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Secured Silicon Sector region
- 128-word/256-byte sector for permanent,
secure identification through an 8-word/16-
byte random Electronic Serial Number
- Can be programmed and locked at the factory
or by the customer
Flexible Sector Architecture:
- Uniform sector models:
One hundred and twenty-eight uniform
32Kword/64Kbyte sectors
- Boot sector models:
Eight 8-Kbyte boot sectors on Top or Bottom
and one hundred twenty-seven 32Kword /
64Kbyte sectors.
Suspend and Resume commands for
Program and Erase operations
Write operation status bits indicate program
and erase operation completion
Support for CFI (Common Flash Interface)
Persistent methods of Advanced Sector
Protection
WP#/ACC input
- Accelerates programming time (when VHH is
applied) for greater throughput during system
production
- Protects first or last sector regardless of
sector protection settings
Hardware reset input (RESET#) resets
device
Ready/Busy# output (RY/BY#) detects
program or erase cycle completion
Minimum 100K program/erase endurance
cycles.
Package Options
- 56-pin TSOP
- 64-ball 11mm x 13mm BGA
Industrial Temperature Range.
GENERAL DESCRIPTION
The EN29GL064 offers a fast page access time of 25 ns with a corresponding random access time as
fast as 70 ns. It features a Write Buffer that allows a maximum of 16 words/32 bytes to be programmed
in one operation, resulting in faster effective programming time than standard programming algorithms.
This makes the device ideal for today’s embedded applications that require higher density, better
performance and lower power consumption.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
Elite Semiconductor Memory Technology Inc.
Rev. O, Issue Date: 2016/07/29




Eon Silicon Solution

EN29GL064 Datasheet Preview

EN29GL064 Datasheet

64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory

No Preview Available !

CONNECTION DIAGRAMS
Figure 1. 56-pin Standard TSOP (Top View)
RFU
RFU
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
RFU
RFU
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Note: RFU= Reserved for future use
Pin 43 and Pin 29 must connect to Vcc at the same time
EN29GL064
56 RFU
55 RFU
54 A16
53 BYTE#
52 Vss
51 DQ15/A-1
50 DQ7
49 DQ14
48 DQ6
47 DQ13
46 DQ5
45 DQ12
44 DQ4
43 Vcc
42 DQ11
41 DQ3
40 DQ10
39 DQ2
38 DQ9
37 DQ1
36 DQ8
35 DQ0
34 OE#
33 Vss
32 CE#
31 A0
30 RFU
29 Vcc
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
Elite Semiconductor Memory Technology Inc.
Rev. O, Issue Date: 2016/07/29


Part Number EN29GL064
Description 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory
Maker Eon Silicon Solution
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EN29GL064 Datasheet PDF






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