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EN29GL064 - 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory

Description

The EN29GL064 offers a fast page access time of 25 ns with a corresponding random access time as fast as 70 ns.

Features

  • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations.
  • High performance - Access times as fast as 70 ns.
  • VIO Input/Output 1.65 to 3.6 volts - All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC.
  • 8-word/16-byte page read buffer.
  • 16-word/32-byte write buffer reduces overall programming time for multiple-word updates.
  • Secur.

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Datasheet preview – EN29GL064

Datasheet Details

Part number EN29GL064
Manufacturer Eon Silicon Solution
File Size 854.86 KB
Description 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory
Datasheet download datasheet EN29GL064 Datasheet
Additional preview pages of the EN29GL064 datasheet.

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Full PDF Text Transcription

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EN29GL064 EN29GL064 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 70 ns • VIO Input/Output 1.65 to 3.6 volts - All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.
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