Megabit Datasheet | Specifications & PDF Download

EN25QH16B (2A) EN25QH16B (2A) 16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES  Single power supply operation - Full voltage range

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Features • Single 2.3V - 3.6V or 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible – Supports SPI Modes 0 and 3 • 66 MHz Maximum Oper

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16 Megabit FlashBank Memory LE28DW1621T-80T (Draft3) FEATURES: 1 Sp ec ifi ca tio ns • • • • • • • • • • Single 3.0-Volt Read and Write Operations

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Features • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Tim

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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Features • IEEE 802.11b-compliant Wireless Standard • Wireless LAN MAC Unit with ARM7TDMI™ RISC Processor • Integrated 128-byte Transmit and 128-byte

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Features • Single 2.7V - 3.6V Supply • Sequential Access, Parallel I/O Architecture • Page Program Operation • • • • • • • • • • – Single Cycle Reprog

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Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible • 20 MHz Max Clock Frequency • Page Program Operation – Single Cyc

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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Features • Single Supply Voltage, Range 2.7V to 3.6V • Single Supply for Read and Write • Fast Read Access Time - 70 ns • Internal Program Control and

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sec

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sec

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Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns • Internal Erase/Program Control •• Sector Architecture

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single Voltage Operation – 5V Read – 5V Programming • Fast Read Access Time - 55 ns • Internal Erase/Program Control • Sector Architecture

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ACT–F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module Features www.aeroflex.com/act1.htm s s s s s CIRCUIT TECHNOLOGY s 4 Low Voltage/Po

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ACT–F4M32A High Speed 128 Megabit Sector Erase FLASH Multichip Module Advanced Features www.aeroflex.com/act1.htm s Ready/Busy output (RY/BY) – Hard

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ACT–PD1M16 Fast Page Mode 16 Megabit Plastic Monolithic DRAM Pin Configuration Top View Vcc I/O0 I/O1 I/O2 I/O3 Vcc I/O4 I/O5 I/O6 I/O7 NC NC WE RAS N

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FINAL Am27X020 2 Megabit (256 K x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS s As an OTP EPROM alternative: — Factory optimized progra

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