Megabit Datasheet | Specifications & PDF Download

Features • Complies with Intel Low-Pin Count (LPC) Interface Specification Revision 1.1 – Supports both Firmware Hub (FWH) and LPC Memory Read and Wri

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture – RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 an

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Am29LV017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fuj

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www.DataSheet4U.com Features • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu

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Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K

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www.DataSheet4U.com Features • • • • • • • • • • Single-voltage Operation Read/Write Operation: 2.7V to 3.6V (BV). 3.0V to 3.6V(LV) Fast Read Access

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EN25S80 EN25S80 8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 1.65-1.9

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Features • • • • • • • • • Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 110 ns Internal Program Cont

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time – 70 ns • Internal Erase/Program Control • Sector Architectur

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ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features s 4 Low Power CMOS 512K x 8 SRAMs in one MCM s Overall configuration as 512

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Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • RapidS Serial Interface: 66 MHz Maximum Clock Frequency – SPI Compatible Modes 0 and 3 • User Co

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Features • Single-voltage Operation • • • – 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture

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Standard Products UT8SF2M40 80Megabit Flow-thru SSRAM Preliminary Datasheet www.aeroflex.com/memories April 2015 FEATURES  Synchronous SRAM organize

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XM25QH128A XM25QH128A preliminary 128 Megabit 3V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES  Single power supply operation - Full vo

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79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM CE1 RES R/B WE OE A0-16 128Kx 8 CE2 128Kx 8 CE3 128Kx 8 CE4 128Kx 8 Memory Logic Diagram I/

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