Download AT49BV8192T Datasheet PDF
AT49BV8192T datasheet preview
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AT49BV8192T Key Features

  • Low Voltage Operation
  • 2.7V Read
  • 5V Program/Erase
  • Fast Read Access Time
  • 120 ns
  • Internal Erase/Program Control
  • Sector Architecture
  • One 8K Words (16K bytes) Boot Block with Programming Lockout
  • Two 8K Words (16K bytes) Parameter Blocks
  • One 488K Words (976K bytes) Main Memory Array Block

Related Atmel Datasheets

Part Number Description
AT49BV8192 8-Megabit (512K x 16) CMOS Flash Memory
AT49BV8192A 8-megabit (1M x 8/512K x 16) Flash Memory
AT49BV8192AT 8-megabit (1M x 8/512K x 16) Flash Memory
AT49BV8011 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
AT49BV8011T 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory

AT49BV8192T Description

The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized as 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 µA.