AT49BV8011T Description
The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 22 sectors for erase operations.
AT49BV8011T Key Features
- Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV)
- Access Time
- Sector Erase Architecture
- 20 µs Fast Sector Erase Time
- 200 ms Dual Plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Four 4K Word, Two 8K Word
- Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector Low-power Operation
- 25 mA Active
- 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection Optional VPP Pin for Fast Programming RE
- I/O15; the x8 data appears on I/O0
- I/O7. The memory is divided into 22 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball CBGA