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AT49BV8192 - 8-Megabit (512K x 16) CMOS Flash Memory

Description

The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized as 512K words of 16 bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read.

Features

  • Low Voltage Operation.
  • 2.7V Read.
  • 5V Program/Erase.
  • Fast Read Access Time - 120 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Words (16K bytes) Boot Block with Programming Lockout.
  • Two 8K Words (16K bytes) Parameter Blocks.
  • One 488K Words (976K bytes) Main Memory Array Block.
  • Fast Sector Erase Time - 10 seconds.
  • Word-By-Word Programming - 30 µs/Word.
  • Hardware Data Protec.

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Datasheet preview – AT49BV8192

Datasheet Details

Part number AT49BV8192
Manufacturer ATMEL
File Size 148.03 KB
Description 8-Megabit (512K x 16) CMOS Flash Memory
Datasheet download datasheet AT49BV8192 Datasheet
Additional preview pages of the AT49BV8192 datasheet.

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Full PDF Text Transcription

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Features • Low Voltage Operation – 2.7V Read – 5V Program/Erase • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks – One 488K Words (976K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Word-By-Word Programming - 30 µs/Word • Hardware Data Protection • DATA Polling For End Of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized as 512K words of 16 bits each.
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