Download EN29LV160A Datasheet PDF
EN29LV160A datasheet preview
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EN29LV160A Key Features

  • 3.0V, single power supply operation
  • Minimizes system level power requirements
  • High performance
  • Access times as fast as 70 ns
  • Low power consumption (typical values at 5 MHz)
  • 9 mA typical active read current
  • 20 mA typical program/erase current
  • Less than 1 µA standby current
  • Sector erase time: 500ms typical
  • Chip erase time: 17.5s typical

Other EN29LV160A Datasheets

Manufacturer Part Number Description
EON Logo Elite Semiconductor Microelectronics Technology EN29LV160C 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
ESMT Logo Elite Semiconductor Microelectronics Technology EN29LV160D 16 Megabit Flash Memory Boot Sector Flash Memory
ESMT Logo Elite Semiconductor Microelectronics Technology EN29LV160DB 16 Megabit Flash Memory Boot Sector Flash Memory
ESMT Logo Elite Semiconductor Microelectronics Technology EN29LV160DT 16 Megabit Flash Memory Boot Sector Flash Memory

EN29LV160A Description

The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs.