Download EN29LV160J Datasheet PDF
EN29LV160J datasheet preview
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EN29LV160J Key Features

  • 3.0V, single power supply operation
  • Minimizes system level power requirements
  • Manufactured on 0.28 µm process technology
  • High performance
  • Access times as fast as 70 ns
  • Low power consumption (typical values at 5 MHz)
  • 7 mA typical active read current
  • 15 mA typical program/erase current
  • 1 µA typical standby current (standard access time to active mode)
  • Flexible Sector Architecture

Other EN29LV160J Datasheets

Manufacturer Part Number Description
EON Logo Elite Semiconductor Microelectronics Technology EN29LV160C 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
ESMT Logo Elite Semiconductor Microelectronics Technology EN29LV160D 16 Megabit Flash Memory Boot Sector Flash Memory
ESMT Logo Elite Semiconductor Microelectronics Technology EN29LV160DB 16 Megabit Flash Memory Boot Sector Flash Memory
ESMT Logo Elite Semiconductor Microelectronics Technology EN29LV160DT 16 Megabit Flash Memory Boot Sector Flash Memory

EN29LV160J Description

The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs.