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Eon Silicon Solution

EN29PL064 Datasheet Preview

EN29PL064 Datasheet

Simultaneous-Read/Write Flash Memory

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EN29PL064
Purpose
Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on
ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the
compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
same as that of Eon delivered before. Please be advised with the change and appreciate your
kindly cooperation and fully support Eon’s product family.
Eon products’ New Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX
Lot Number: XXXXX
Date Code: XXXXX
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as an Eon product. Any
changes that have been made are the result of normal data sheet improvement and are noted in
the document revision summary, where supported. Future routine revisions will occur when
appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Eon continues to support existing part numbers beginning with “Eon” and “cFeon” top marking. To
order these products, during the transition please specify “Eon top marking” or “cFeon top marking”
on your purchasing orders.
For More Information
Please contact your local sales office for additional information about Eon memory solutions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
Elite Semiconductor Memory Technology Inc.
Rev. L, Issue Date: 2016/08/15




Eon Silicon Solution

EN29PL064 Datasheet Preview

EN29PL064 Datasheet

Simultaneous-Read/Write Flash Memory

No Preview Available !

EN29PL064
64 Mbit (4 M x 16-Bit) CMOS 3.0 Volt- only,
Simultaneous-Read/Write Flash Memory
EN29PL064
Distinctive Characteristics
Architectural Advantages
64 Mbit Page Mode devices
- Page size of 4 words: Fast page read access
from random locations within the page
Single power supply operation
- Voltage range of 2.7V to 3.3V valid for MCP
product
- Single Voltage, 2.7V to 3.6V for Read and Write
operations
Simultaneous Read/Write Operation
- Data can be continuously read from one bank
while executing erase/ program functions in
another bank
- Zero latency switching from write to read
operations
FlexBank Architecture
- 4 separate banks, with up to two simultaneous
operations per device
- Bank A: 8 Mbit (4 Kw x 8 and 32 Kw x 15)
- Bank B: 24 Mbit (32 Kw x 48)
- Bank C: 24 Mbit (32 Kw x 48)
- Bank D: 8 Mbit (4 Kw x 8 and 32 Kw x 15)
Secured Silicon Sector region
- 64 words Secured Silicon Sector region
Both top and bottom boot blocks in one device
Cycling Endurance: 100K cycles per sector
typical
Performance Characteristics
High Performance
- Page access times as fast as 25 ns
- Random access times as fast as 70 ns
- 32-word/64-byte write buffer reduces overall
programming time for multiple-word updates
Power consumption (typical values at 10 MHz)
- 45 mA active read current
- 17 mA program/erase current
- 0.2 µA typical standby mode current
Software Features
Software command-set compatible with
JEDEC 42.4 standard
CFI (Common Flash Interface) compliant
- Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
Erase Suspend / Erase Resume
- Suspends an erase operation to allow read or
program operations in other sectors of same
bank
Program Suspend / Program Resume
- Suspends a program operation to allow read
operation from sectors other than the one
being programmed
Hardware Features
Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting
program or erase cycle completion
Hardware reset pin (RESET#)
- Hardware method to reset the device to reading
array data
WP#/ ACC (Write Protect/Acceleration) input
- At VIL, hardware level protection for the first and
last two 4K word sectors.
- At VIH, allows removal of sector protection
- At VHH, provides accelerated programming in a
factory setting
Persistent Sector Protection
- A command sector protection method to lock
combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector
- Sectors can be locked and unlocked in-system at
VCC level
Package options
- 48-pin TSOP-1
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
Elite Semiconductor Memory Technology Inc.
Rev. L, Issue Date: 2016/08/15


Part Number EN29PL064
Description Simultaneous-Read/Write Flash Memory
Maker Eon Silicon Solution
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