EM42CM1684RTA Description
Internal Double-Date-Rate architecture with twice accesses per clock cycle. Single 2.5V ±0.2V Power Supply 2.5V SSTL-2 patible I/O Burst Length (B/L) of 2, 4, 8 CAS Latency: The 1Gb DDR SDRAM uses double data rate architecture to acplish high-speed operation.
EM42CM1684RTA Key Features
- Internal Double-Date-Rate architecture with twice accesses per clock cycle
- Single 2.5V ±0.2V Power Supply
- 2.5V SSTL-2 patible I/O
- Burst Length (B/L) of 2, 4, 8
- CAS Latency: 3
- Bi-directional data strobe (DQS) for input and
- Data Mask (DM) for write data
- Sequential & Interleaved Burst type available
- Auto precharge option for each burst accesses
- DQS edge-aligned with data for Read cycles