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EM6128K800V - 128Kx8 LP SRAM

Description

The EM6128K800V is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits.

It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

Features

  • z z Fast access time: 35/55/70ns Low power consumption: Operating current: 12/10/7mA (TYP. ) Standby current: -L/-LL version 20/1µA (TYP. ) Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation z z z Tri-state output Data retention voltage: 1.5V (MIN. ) Package: 32-pin 450 mil SOP 32-pin 600 mil P-DIP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 36-ball 6mm x 8mm TFBGA z z z.

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Datasheet preview – EM6128K800V

Datasheet Details

Part number EM6128K800V
Manufacturer Eorex Corporation
File Size 413.38 KB
Description 128Kx8 LP SRAM
Datasheet download datasheet EM6128K800V Datasheet
Additional preview pages of the EM6128K800V datasheet.

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Full PDF Text Transcription

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128Kx8 LP SRAM EM6128K800V Series GENERAL DESCRIPTION www.DataSheet4U.com The EM6128K800V is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6128K800V is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The EM6128K800V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible FEATURES z z Fast access time: 35/55/70ns Low power consumption: Operating current: 12/10/7mA (TYP.) Standby current: -L/-LL version 20/1µA (TYP.) Single 2.7V ~ 3.
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